具有成本效益的晶圆级老化技术

D. Tuckerman, B. Jarvis, Chang-Ming Lin, P. Patel, M. Hunt
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引用次数: 6

摘要

提出了一种新的晶圆级烧进方法。该方法采用采用MCM-D衬底技术制造的硅“内置衬底”,并包括集成隔离电阻。这种新颖的硅片对硅片压力接触技术基于可变形的焊料凸起,可在高温烧坏环境中发挥作用,不受热膨胀不匹配问题的影响,可重复使用,并且不会损坏或污染焊盘。该方法适用于大批量生产,可以降低损耗成本,甚至对于最终用于单芯片封装的芯片也是如此。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Cost-Effective Wafer-Level Burn-In Technology
A new wafer-level bum-in method is presented. The method incorporates a silicon "bum-in substrate" fabricated using MCM-D substrate technology, and includes integral isolation resistors. The novel, Si wafer-to Si wafer pressure contact technology is based on deformable solder bumps and is functional in a high temperature burn-in environment, immune to thermal expansion mismatch problems, reusable, and does not damage or contaminate bond pads. The method is suitable for high-volume production and can reduce bum-in costs, even for chips that are ultimately destined for single-chip packages.
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