D. Morgan, M. Howes, S. Mukherjee, D. Taylor, P. Brook
{"title":"Cr/Pt/Ag金属化层在硅冲击二极管上的相互扩散","authors":"D. Morgan, M. Howes, S. Mukherjee, D. Taylor, P. Brook","doi":"10.1049/IJ-SSED:19770023","DOIUrl":null,"url":null,"abstract":"Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0·5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400°C with practically no observable diffusion.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interdiffusion of Cr/Pt/Ag metallisation layers on silicon impatt diodes\",\"authors\":\"D. Morgan, M. Howes, S. Mukherjee, D. Taylor, P. Brook\",\"doi\":\"10.1049/IJ-SSED:19770023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0·5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400°C with practically no observable diffusion.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19770023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19770023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interdiffusion of Cr/Pt/Ag metallisation layers on silicon impatt diodes
Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0·5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400°C with practically no observable diffusion.
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