生长温度对纳米晶ZnO薄膜FET性能的影响

B. Bayraktaroglu, K. Leedy
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引用次数: 0

摘要

纳米晶ZnO (nc-ZnO)薄膜晶体管(TFT)正被开发用于比其他全薄膜技术要求更高性能的应用。由于其独特的紧密排列的纳米柱结构,可以在大型非共形表面上制备均匀质量的nc-ZnO薄膜。在GaAs1和Si2衬底上制备的器件表现出优异的性能特征。栅极长度为2 μ m的器件具有超过100 cm2/V的场效应迁移率。s,漏极通断比大于1012,跨导80mS/mm,电流密度大于400mA/mm。采用1.2µm栅极长度器件,得到了fT=2.45GHz和fmax=7.45GHz的高频截止频率值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth temperature influence on nanocrystalline ZnO thin film FET performance
Nanocrystalline ZnO (nc-ZnO) thin film transistors (TFT) are being developed for applications that require much higher performance than TFTs available from other all thin film technologies. Because of their unique closely packed nanocolumnar structures, uniform quality nc-ZnO films can be fabricated over large non-conformal surfaces. Excellent performance characteristics were demonstrated with devices fabricated on GaAs1 and Si2 substrates. Devices with 2µm gate lengths had field effect mobilities in excess of 100 cm2/V.s, drain current on/off ratios of better than 1012, transconductance of 80mS/mm and current densities higher than 400mA/mm. High frequency cut-off frequency values of fT=2.45GHz and fmax=7.45GHz were demonstrated with 1.2µm gate length devices.
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