M. Muller, A. Mondot, D. Aimé, N. Gierczynski, G. Ribes, T. Skotnicki
{"title":"全硅化(TOSI)栅极作为先进CMOS技术的一种进化的金属栅极解决方案","authors":"M. Muller, A. Mondot, D. Aimé, N. Gierczynski, G. Ribes, T. Skotnicki","doi":"10.1109/ICICDT.2006.220816","DOIUrl":null,"url":null,"abstract":"In this paper, we show that totally silicided (TOSI) gate electrodes offer an interesting and industrially viable option for the integration of metal gate electrodes in advanced CMOS technologies as their integration requires only few modifications with respect to a CMOS standard flow. Moreover, the use of NiSi gives access to an electrode with a tunable mid-gap work function. The potential of TOSI-gate devices is demonstrated by integration and device results including fully operational SRAM cells and reliability data","PeriodicalId":447050,"journal":{"name":"2006 IEEE International Conference on IC Design and Technology","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Totally Silicided (TOSI) Gates as an evolutionary metal gate solution for advanced CMOS technologies\",\"authors\":\"M. Muller, A. Mondot, D. Aimé, N. Gierczynski, G. Ribes, T. Skotnicki\",\"doi\":\"10.1109/ICICDT.2006.220816\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we show that totally silicided (TOSI) gate electrodes offer an interesting and industrially viable option for the integration of metal gate electrodes in advanced CMOS technologies as their integration requires only few modifications with respect to a CMOS standard flow. Moreover, the use of NiSi gives access to an electrode with a tunable mid-gap work function. The potential of TOSI-gate devices is demonstrated by integration and device results including fully operational SRAM cells and reliability data\",\"PeriodicalId\":447050,\"journal\":{\"name\":\"2006 IEEE International Conference on IC Design and Technology\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on IC Design and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2006.220816\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on IC Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2006.220816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Totally Silicided (TOSI) Gates as an evolutionary metal gate solution for advanced CMOS technologies
In this paper, we show that totally silicided (TOSI) gate electrodes offer an interesting and industrially viable option for the integration of metal gate electrodes in advanced CMOS technologies as their integration requires only few modifications with respect to a CMOS standard flow. Moreover, the use of NiSi gives access to an electrode with a tunable mid-gap work function. The potential of TOSI-gate devices is demonstrated by integration and device results including fully operational SRAM cells and reliability data
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
