技术规模对lc - vco性能影响的评估

2009 Proceedings of ESSCIRC Pub Date : 2009-11-13 DOI:10.1109/ESSDERC.2009.5331398

D. Ponton, G. Knoblinger, A. Roithmeier, M. Tiebout, M. Fulde, P. Palestri

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引用次数: 2

摘要

分析了采用先进的平面CMOS技术实现的LC压控振荡器(LC- vco)的标度问题。用于GSM应用的LC-VCO采用最先进的45/40纳米和32纳米CMOS技术设计，利用不同的前端和后端线(FEOL/BEOL)选项。这些设计在功率和相位噪声性能方面相互比较，并与最近的文献进行了比较。

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Assessment of the impact of technology scaling on the performance of LC-VCOs

This paper analyzes the scaling of LC Voltage Controlled Oscillator (LC-VCO) implemented in advanced Planar CMOS technologies. An LC-VCO for GSM applications, has been designed in state-of-the-art 45/40nm and 32nm CMOS technologies, exploiting different Front- and Back-End Of Line (FEOL/BEOL) options. The designs are compared with each other and with recent literature in terms of power and Phase-Noise performance.

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2009 Proceedings of ESSCIRC

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