功率半导体器件的芯片级冷却:射流冲击设计的制造

Feng Zhou, K. Jung, Y. Fukuoka, E. Dede
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引用次数: 3

摘要

芯片级冷却被提出用于未来的宽带隙(WBG)功率半导体器件,以克服与器件功耗、高达1kw /cm2的高热流和传统封装热阻相关的挑战。在本文中,描述了一种芯片级冷却器的制造,该冷却器利用流体射流撞击和流动通过优化的分支微通道拓扑。基于先前的数值和实验研究,与直接微通道设计相比,在相同的泵送功率下,这种芯片级的冷却结构预计将提供大约70%的高冷却性能和更均匀的冷却。所提出的嵌入式流结构由三层定义,每层由六英寸硅片的双面蚀刻制成。最终器件是通过将三个蚀刻层粘合在一起并将三个晶圆堆栈切割成单独的芯片而获得的。冷却芯片的设计和制造,包括工艺挑战和解决方案,是当前论文的重点。对目前的技术进行了讨论,并对其未来的应用前景进行了展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Chip-scale cooling of power semiconductor devices: Fabrication of Jet impingement design
Chip-scale cooling is proposed for future wide bandgap (WBG) power semiconductor devices to overcome challenges associated with device power dissipation, high heat fluxes up to 1 kW/cm2, and traditional package thermal resistance. In the current paper, fabrication of a chip-scale cooler that utilizes fluid jet impingement plus flow through an optimized branching microchannel topology is described. This chip-scale cooling structure is expected to provide an estimated 70% higher cooling performance for the same pumping power and more uniform cooling relative to a straight microchannel design based on prior numerical and experimental studies. The proposed embedded flow structure is defined by three layers, and each layer is fabricated by double-sided etching of a six-inch silicon wafer. The final device is obtained by bonding the three etched layers together and dicing the three-wafer stack into individual chips. The design and fabrication of the cooling chip, including process challenges and solutions, is the focus of the current paper. Discussion of the current technology and a vision of its future application is also provided.
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