Vertical GaN Schottky Barrier Diode with Record High FOM (1.23GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy

For most of the vertical power devices, the n-GaN drift layers were fabricated by Metal Organic Chemical Vapor Deposition (MOCVD), which would unintentionally introduce carbon atoms related to deep levels within the band gap of the GaN epitaxial layer1, 2, 3. Further, in order to reduce the power consumption, many works have been done to reduce the on-resistance ($R_{ON}$) and turn-on voltage ($V_{ON}$) of devices4, 5, 6. In this work, high quality n-GaN drift layer with low carbon impurity concentration grown by Hydride Vapor Phase Epitaxy (HVPE) was first demonstrated. Also, indium tin oxide (ITO) technology and O2 plasma treatment (OPT) were employed to achieve the $R_{ON}(1.24\ \mathrm{m}\Omega\cdot \text{cm}^{2})$ and $V_{ON}$ (0.37 V) for the ∼1.2 kV Schottky barrier diode.