PVT变异性下finFET晶体管鲁棒性评价

2017 1st Conference on PhD Research in Microelectronics and Electronics Latin America (PRIME-LA) Pub Date : 2017-02-01 DOI:10.1109/PRIME-LA.2017.7899176

A. Zimpeck, C. Meinhardt, R. Reis

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引用次数: 1

摘要

这项工作为PVT可变性对22nm以下技术的FinFET晶体管的on和OFF电流的影响提供了预测评估。结果表明，OFF电流受所有变异性源的影响最大。就工艺可变性效应而言，LG和WFF的变化对IOFF的影响最大，尤其是对pet和NFET器件。电压和温度的变化对pet器件的破坏更大。

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Robustness evaluation of finFET transistors under PVT variability

This work provides a predictive evaluation of the impact that PVT variability causes on ON and OFF currents of FinFET transistors in technologies sub-22nm. Results show that the OFF current is the most impacted by all sources of variability. In terms of process variability effects, the LG and WFF variations cause the worst values to IOFF, especially for PFET and NFET devices, respectively. Voltage and temperature variations effects damage more the PFET devices.

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2017 1st Conference on PhD Research in Microelectronics and Electronics Latin America (PRIME-LA)

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