{"title":"si -肖特基势垒二极管在SiGe BiCMOS技术中的可靠性方面","authors":"A. Mai, A. Fox","doi":"10.1109/ESSDERC.2015.7324757","DOIUrl":null,"url":null,"abstract":"Schottky barrier diodes (SBD) were integrated in a 0.25 μm SiGe BiCMOS technology. The SBDs were realized without additional process steps using the titanium silicide (TiSi) phase of the standard contact formation for the anode Schottky barrier. We observe a specific parameter degradation after reverse anode voltage operation. Different parameters as series resistance Rs, forward and leakage currents (IA, Ir) and design parameters like anode area, contact edge lengths and corners were evaluated in order to decrease this degradation. The on-resistance Ron and capacitance Coff were extracted by s-parameter measurements and show an obvious decreased degradation. Finally maximum reverse operating voltages for a ten year life time and a maximum change of 10% for critical parameters were extrapolated for the worst operation conditions.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Reliability aspects of TiSi-Schottky barrier diodes in a SiGe BiCMOS technology\",\"authors\":\"A. Mai, A. Fox\",\"doi\":\"10.1109/ESSDERC.2015.7324757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Schottky barrier diodes (SBD) were integrated in a 0.25 μm SiGe BiCMOS technology. The SBDs were realized without additional process steps using the titanium silicide (TiSi) phase of the standard contact formation for the anode Schottky barrier. We observe a specific parameter degradation after reverse anode voltage operation. Different parameters as series resistance Rs, forward and leakage currents (IA, Ir) and design parameters like anode area, contact edge lengths and corners were evaluated in order to decrease this degradation. The on-resistance Ron and capacitance Coff were extracted by s-parameter measurements and show an obvious decreased degradation. Finally maximum reverse operating voltages for a ten year life time and a maximum change of 10% for critical parameters were extrapolated for the worst operation conditions.\",\"PeriodicalId\":332857,\"journal\":{\"name\":\"2015 45th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 45th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2015.7324757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 45th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2015.7324757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability aspects of TiSi-Schottky barrier diodes in a SiGe BiCMOS technology
Schottky barrier diodes (SBD) were integrated in a 0.25 μm SiGe BiCMOS technology. The SBDs were realized without additional process steps using the titanium silicide (TiSi) phase of the standard contact formation for the anode Schottky barrier. We observe a specific parameter degradation after reverse anode voltage operation. Different parameters as series resistance Rs, forward and leakage currents (IA, Ir) and design parameters like anode area, contact edge lengths and corners were evaluated in order to decrease this degradation. The on-resistance Ron and capacitance Coff were extracted by s-parameter measurements and show an obvious decreased degradation. Finally maximum reverse operating voltages for a ten year life time and a maximum change of 10% for critical parameters were extrapolated for the worst operation conditions.
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