用DCIV法提取杂质浓度谱

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 2001-04-18 DOI:10.1109/VTSA.2001.934475

Yihui Wang, C. Sah

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引用次数: 1

摘要

利用DCIV(基极电流vs栅极电压)特性的线形来提取漏极和源极延伸区、漏极和源极结区以及基井沟道区表面杂质浓度的空间变化。举例说明了缺陷增强杂质扩散的纳米空间分辨率，氮化物阻挡硼穿透薄栅氧化物，以及应变诱导的界面陷阱。

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Extraction of impurity concentration profiles by the DCIV method

The lineshape of the DCIV (Base Current vs Gate Voltage) characteristics is used to extract the spatial variation of the surface impurity concentration in the drain and source extension regions, the drain and source junction regions, and the basewell channel region. Examples are presented to illustrate nanometer spatial resolution of defect enhanced impurity diffusion, nitride barrier against boron penetration through thin gate oxide, and strain-induced interface traps.

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来源期刊

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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