用扫描热显微镜和电子背散射衍射联合研究gan -蓝宝石结构的热导率

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232593

Y. Zhang, L. Wang, Y. Ji, X. Han, Z. Zhang, R. Heiderhoff, A.-K. Tiedemann, L. Balk

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摘要

采用扫描热显微镜(SThM)和电子背散射衍射(EBSD)技术研究了gan -缓冲蓝宝石异质结构的局部热导率。与氮化镓薄膜相比，由于晶格畸变，缓冲层表现出低导热性和高应变状态。

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Thermal conductivity studies of a GaN-sapphire structure by combined scanning thermal microscopy and electron backscatter diffraction

Scanning thermal microscope (SThM) and electron backscatter diffraction (EBSD) techniques were used to investigate the local thermal-conductivity of a GaN-buffer-sapphire heterostructure. Compared with GaN epilayer, buffer layer displayed the low thermal-conductivity and the high strain state due to the lattice distortion.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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