{"title":"垂直mosfet对NAND闪存磁芯电路设计的影响","authors":"K. Sakui, T. Endoh","doi":"10.1109/IMW.2010.5488310","DOIUrl":null,"url":null,"abstract":"By utilizing the vertical MOSFETs advantages, the compact, efficient, and low-power peripheral core circuit design for the NAND Flash memory has been proposed.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design impacts on NAND Flash memory core circuits with vertical MOSFETs\",\"authors\":\"K. Sakui, T. Endoh\",\"doi\":\"10.1109/IMW.2010.5488310\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By utilizing the vertical MOSFETs advantages, the compact, efficient, and low-power peripheral core circuit design for the NAND Flash memory has been proposed.\",\"PeriodicalId\":149628,\"journal\":{\"name\":\"2010 IEEE International Memory Workshop\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Memory Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2010.5488310\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488310","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design impacts on NAND Flash memory core circuits with vertical MOSFETs
By utilizing the vertical MOSFETs advantages, the compact, efficient, and low-power peripheral core circuit design for the NAND Flash memory has been proposed.