{"title":"用气簇离子束(GCIB)辐照抛光金刚石衬底,用于直接键合功率器件","authors":"Junsha Wang, K. Takeuchi, I. Kataoka, T. Suga","doi":"10.23919/ICEP55381.2022.9795483","DOIUrl":null,"url":null,"abstract":"Gas cluster ion beam (GCIB) was employed to polish CVD diamond substrates for the direct bonding to power devices. After the coarse and fine polishing, the surface roughness Ra of diamond was reduced from 334 nm to 0.5 nm. The polished diamond substrate was successfully bonded to GaN at room temperature by surface activated bonding (SAB) method with a Si nano-layer.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"123 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polishing Diamond Substrates using Gas Cluster Ion Beam (GCIB) Irradiation for the Direct Bonding to Power Devices\",\"authors\":\"Junsha Wang, K. Takeuchi, I. Kataoka, T. Suga\",\"doi\":\"10.23919/ICEP55381.2022.9795483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gas cluster ion beam (GCIB) was employed to polish CVD diamond substrates for the direct bonding to power devices. After the coarse and fine polishing, the surface roughness Ra of diamond was reduced from 334 nm to 0.5 nm. The polished diamond substrate was successfully bonded to GaN at room temperature by surface activated bonding (SAB) method with a Si nano-layer.\",\"PeriodicalId\":413776,\"journal\":{\"name\":\"2022 International Conference on Electronics Packaging (ICEP)\",\"volume\":\"123 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ICEP55381.2022.9795483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP55381.2022.9795483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Polishing Diamond Substrates using Gas Cluster Ion Beam (GCIB) Irradiation for the Direct Bonding to Power Devices
Gas cluster ion beam (GCIB) was employed to polish CVD diamond substrates for the direct bonding to power devices. After the coarse and fine polishing, the surface roughness Ra of diamond was reduced from 334 nm to 0.5 nm. The polished diamond substrate was successfully bonded to GaN at room temperature by surface activated bonding (SAB) method with a Si nano-layer.