110GHz高性能压敏电阻三倍器

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI:10.1109/MMWCST.2012.6238180

Bo Zhang, Yong Fan, S. Zhang, X. Yang, F. Zhong, Zhe Chen

{"title":"110GHz高性能压敏电阻三倍器","authors":"Bo Zhang, Yong Fan, S. Zhang, X. Yang, F. Zhong, Zhe Chen","doi":"10.1109/MMWCST.2012.6238180","DOIUrl":null,"url":null,"abstract":"A 110GHz Schottky diode frequency tripler made with four barrier diodes by two DBES105a diodes from United Monolithic Semiconductor (UMS) company is presented. The circuit is design on a suspended quartz. The whole frequency tripler circuit is optimized by harmonic balance analysis simulator of ADS. The measured multiplication output power reaches 5mW and the efficiency is nearly 3% from 106GHz to 114GHz.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"48 25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"110GHz high performanced varistor tripler\",\"authors\":\"Bo Zhang, Yong Fan, S. Zhang, X. Yang, F. Zhong, Zhe Chen\",\"doi\":\"10.1109/MMWCST.2012.6238180\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 110GHz Schottky diode frequency tripler made with four barrier diodes by two DBES105a diodes from United Monolithic Semiconductor (UMS) company is presented. The circuit is design on a suspended quartz. The whole frequency tripler circuit is optimized by harmonic balance analysis simulator of ADS. The measured multiplication output power reaches 5mW and the efficiency is nearly 3% from 106GHz to 114GHz.\",\"PeriodicalId\":150727,\"journal\":{\"name\":\"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology\",\"volume\":\"48 25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMWCST.2012.6238180\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMWCST.2012.6238180","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

介绍了一种采用联合单片半导体(UMS)公司的2个DBES105a二极管，由4个势垒二极管组成的110GHz肖特基二极管三倍频器。电路设计在悬浮石英上。通过ADS谐波平衡分析模拟器对整个三倍器电路进行了优化，在106GHz ~ 114GHz范围内，倍增输出功率达到5mW，效率接近3%。

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110GHz high performanced varistor tripler

A 110GHz Schottky diode frequency tripler made with four barrier diodes by two DBES105a diodes from United Monolithic Semiconductor (UMS) company is presented. The circuit is design on a suspended quartz. The whole frequency tripler circuit is optimized by harmonic balance analysis simulator of ADS. The measured multiplication output power reaches 5mW and the efficiency is nearly 3% from 106GHz to 114GHz.

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来源期刊

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology

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