E. Ceccarelli, C. Heffernan, J. Browne, P. Fitzgerald
{"title":"单机MEMS开关技术的固有可靠性表征","authors":"E. Ceccarelli, C. Heffernan, J. Browne, P. Fitzgerald","doi":"10.1109/IIRW.2016.7904907","DOIUrl":null,"url":null,"abstract":"This work presents a device level reliability (DLR) characterization for the Analog Devices proprietary metal contact microelectromechanical systems (MEMS) switch technology. Stand-alone device characterizations in both hold-down and toggle operation modes are described. An alternative operation mode to analyze is the so called “hot switching”. The switch pull-in voltage and the contact resistance are the main physical parameters that have been analyzed. This DLR characterization methodology can be considered a first step towards a standard that will be performed in parallel to typical product qualifications in order to assess the device long term reliability.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Intrinsic reliability characterization for stand-alone MEMS switch technology\",\"authors\":\"E. Ceccarelli, C. Heffernan, J. Browne, P. Fitzgerald\",\"doi\":\"10.1109/IIRW.2016.7904907\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a device level reliability (DLR) characterization for the Analog Devices proprietary metal contact microelectromechanical systems (MEMS) switch technology. Stand-alone device characterizations in both hold-down and toggle operation modes are described. An alternative operation mode to analyze is the so called “hot switching”. The switch pull-in voltage and the contact resistance are the main physical parameters that have been analyzed. This DLR characterization methodology can be considered a first step towards a standard that will be performed in parallel to typical product qualifications in order to assess the device long term reliability.\",\"PeriodicalId\":436183,\"journal\":{\"name\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2016.7904907\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Intrinsic reliability characterization for stand-alone MEMS switch technology
This work presents a device level reliability (DLR) characterization for the Analog Devices proprietary metal contact microelectromechanical systems (MEMS) switch technology. Stand-alone device characterizations in both hold-down and toggle operation modes are described. An alternative operation mode to analyze is the so called “hot switching”. The switch pull-in voltage and the contact resistance are the main physical parameters that have been analyzed. This DLR characterization methodology can be considered a first step towards a standard that will be performed in parallel to typical product qualifications in order to assess the device long term reliability.