低温应力辅助cu诱导横向生长和锗无金属结晶制备隧道型和耗尽型tft

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367796

B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, M. Robertson

{"title":"低温应力辅助cu诱导横向生长和锗无金属结晶制备隧道型和耗尽型tft","authors":"B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, M. Robertson","doi":"10.1109/DRC.2004.1367796","DOIUrl":null,"url":null,"abstract":"Tunneling and depletion-mode poly-Ge TFTs were fabricated at temperatures as low as 150/spl deg/C and 200/spl deg/C respectively. Fabrication of the tunneling TFTs was based on stress-assisted lateral growth of Ge from Cu-seeded islands. In a different approach, depletion-mode TFTs were fabricated, based on metal-free crystallization of Ge by successive steps of hydrogenation and annealing.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of germanium\",\"authors\":\"B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, M. Robertson\",\"doi\":\"10.1109/DRC.2004.1367796\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tunneling and depletion-mode poly-Ge TFTs were fabricated at temperatures as low as 150/spl deg/C and 200/spl deg/C respectively. Fabrication of the tunneling TFTs was based on stress-assisted lateral growth of Ge from Cu-seeded islands. In a different approach, depletion-mode TFTs were fabricated, based on metal-free crystallization of Ge by successive steps of hydrogenation and annealing.\",\"PeriodicalId\":385948,\"journal\":{\"name\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2004.1367796\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367796","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在低至150/spl℃和200/spl℃的温度下制备隧道型和耗尽型多锗tft。隧道tft的制备是基于cu种子岛中Ge的应力辅助横向生长。在不同的方法中，通过加氢和退火的连续步骤制备了基于Ge无金属结晶的耗尽模式tft。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of germanium

Tunneling and depletion-mode poly-Ge TFTs were fabricated at temperatures as low as 150/spl deg/C and 200/spl deg/C respectively. Fabrication of the tunneling TFTs was based on stress-assisted lateral growth of Ge from Cu-seeded islands. In a different approach, depletion-mode TFTs were fabricated, based on metal-free crystallization of Ge by successive steps of hydrogenation and annealing.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

自引率

0.00%

发文量