{"title":"下一个十年闪存的技术要求","authors":"K. Yoshikawa","doi":"10.1109/ESSDERC.2000.194721","DOIUrl":null,"url":null,"abstract":"Technology challenges for current flash memories are given for aiming technology survival beyond the 0.13 m. Basic concepts of current flash devices are critically reviewed to clarify technology challenges. Various approaches and research items will be discussed from broad viewpoints, such as reliability, dielectric/device physics, process integration, ---. Future promising cell structure will be also addressed.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Technology Requirements for Next Decade Flash Memories\",\"authors\":\"K. Yoshikawa\",\"doi\":\"10.1109/ESSDERC.2000.194721\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Technology challenges for current flash memories are given for aiming technology survival beyond the 0.13 m. Basic concepts of current flash devices are critically reviewed to clarify technology challenges. Various approaches and research items will be discussed from broad viewpoints, such as reliability, dielectric/device physics, process integration, ---. Future promising cell structure will be also addressed.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194721\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Technology Requirements for Next Decade Flash Memories
Technology challenges for current flash memories are given for aiming technology survival beyond the 0.13 m. Basic concepts of current flash devices are critically reviewed to clarify technology challenges. Various approaches and research items will be discussed from broad viewpoints, such as reliability, dielectric/device physics, process integration, ---. Future promising cell structure will be also addressed.
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