一种具有高温保持的快速低压铜互补原子开关1Mb阵列

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894437

N. Banno, M. Tada, T. Sakamoto, M. Miyamura, K. Okamoto, N. Iguchi, T. Nohisa, H. Hada

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引用次数: 11

摘要

首次在1Mb开关阵列上实现了铜原子开关的快速(10ns)和低电压(2V)编程。新开发的Al0.5Ti0.5Ox氧化还原控制缓冲器通过消除Cu表面的金属Al残留物，可以实现电压依赖时间到on状态的极陡斜率切换(56mV/ 10年)。在260°C的数据保留测试和125°C的直流应力测试(Imax=140μA)下，编程on状态均显示出较长的寿命。对于低功耗、非易失性可编程逻辑(NPL)中使用的电桥，氧化还原控制技术是必不可少的。

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A fast and low-voltage Cu complementary-atom-switch 1Mb array with high-temperature retention

Fast (10ns) and low voltage (2V) programming of Cu atom switch has been demonstrated in a 1Mb switch array for the first time. A newly developed redox-control buffer of Al_0.5Ti_0.5O_x leads to extremely steep slope switching of voltage dependent time-to-ON-state (56mV/decade), by eliminating metallic Al residues at the Cu surface. The programmed ON-state shows long lifetimes both under data-retention test at 260°C and DC stress test (I_max=140μA) at 125°C. A redox-control technology is indispensable for conducting bridges used in a low-power, nonvolatile programmable logic (NPL).

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量