Ge1−x−ySixSny层在Ge(001)衬底上的外延生长和晶体性质

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874688

T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

{"title":"Ge1−x−ySixSny层在Ge(001)衬底上的外延生长和晶体性质","authors":"T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima","doi":"10.1109/ISTDM.2014.6874688","DOIUrl":null,"url":null,"abstract":"We investigated the crystalline structure of Ge1-x-ySixSny layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge1-x-ySixSny layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge1-x-ySixSny layer even with small misfit strain.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Epitaxial growth and crystalline properties of Ge1−x−ySixSny layers on Ge(001) substrates\",\"authors\":\"T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima\",\"doi\":\"10.1109/ISTDM.2014.6874688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the crystalline structure of Ge1-x-ySixSny layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge1-x-ySixSny layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge1-x-ySixSny layer even with small misfit strain.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们研究了在Ge(001)衬底上外延生长的Ge1-x-ySixSny层的晶体结构。可以生长出表面非常平整、结晶度高的非应变和压缩应变的Ge1-x-ySixSny层。我们发现应变方向的控制对于形成高质量的Ge1-x-ySixSny层非常重要，即使错配应变很小。

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Epitaxial growth and crystalline properties of Ge1−x−ySixSny layers on Ge(001) substrates

We investigated the crystalline structure of Ge_1-x-ySi_xSn_y layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge_1-x-ySi_xSn_y layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge_1-x-ySi_xSn_y layer even with small misfit strain.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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