一种用于超低电压和超低功耗工作的开关电容CMOS电压基准

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009) Pub Date : 2009-12-01 DOI:10.1109/ICECS.2009.5410964

Zihua Qu, Meng Zhang, Jianhui Wu

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引用次数: 3

摘要

本文提出了一种利用亚阈值、体效应和开关电容技术的超低电压低功耗CMOS基准电压。该结构中不使用电阻器和BJT。采用特许的0.18µm CMOS工艺对该电路进行了仿真。仿真结果表明，该基准电压可以在低于0.6 v的电压下工作，在0.58V电压下，总供电电流为210nA。温度系数为7.67ppm/°C，温度范围为- 40°C至85°C。布局面积仅0.018 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A switched-capacitor CMOS voltage reference for ultra low-voltage and ultra low-power operation

An ultra low-voltage and low-power CMOS voltage reference using subthreshold, body effect and switched-capacitor techniques is proposed in this paper. No resistor and BJT is used in this structure. The proposed circuit has been simulated with Chartered 0.18-µm CMOS process. The simulated results show that the voltage reference can operate with sub-0.6V supply and total supply current is 210nA at 0.58V supply. The temperature coefficient of 7.67ppm/ °C for a temperature range of −40°C to 85°C is achieved. The layout area is only 0.018 mm2.

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2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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