Nicholas Estella, L. Bui, E. Camargo, J. Schellenberg
{"title":"E/ w波段35nm InP HEMT LNAs","authors":"Nicholas Estella, L. Bui, E. Camargo, J. Schellenberg","doi":"10.1109/CSICS.2016.7751007","DOIUrl":null,"url":null,"abstract":"This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 28 ±1 dB. This is the lowest reported noise figure for LNAs at this frequency. Secondly, a balanced LNA, operating over the 56- 110 GHz band, is reported with a NF of typically 2.7 dB and a gain of greater than 20 dB. This amplifier represents an unprecedented combination of low noise, good input/output match, and broad bandwidth.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"35nm InP HEMT LNAs at E/W-Band Frequencies\",\"authors\":\"Nicholas Estella, L. Bui, E. Camargo, J. Schellenberg\",\"doi\":\"10.1109/CSICS.2016.7751007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 28 ±1 dB. This is the lowest reported noise figure for LNAs at this frequency. Secondly, a balanced LNA, operating over the 56- 110 GHz band, is reported with a NF of typically 2.7 dB and a gain of greater than 20 dB. This amplifier represents an unprecedented combination of low noise, good input/output match, and broad bandwidth.\",\"PeriodicalId\":183218,\"journal\":{\"name\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2016.7751007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 28 ±1 dB. This is the lowest reported noise figure for LNAs at this frequency. Secondly, a balanced LNA, operating over the 56- 110 GHz band, is reported with a NF of typically 2.7 dB and a gain of greater than 20 dB. This amplifier represents an unprecedented combination of low noise, good input/output match, and broad bandwidth.
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