H. Fukuda, S. Horiguchi, M. Urano, K. Fukami, K. Matsuda, N. Ohwada, H. Akiya
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引用次数: 15
摘要
本文描述了一种解决亚微米器件中电压容限引起的可靠性问题的方法,该方法涉及使用片上电压转换系统降低工作电压。masterslice具有片上电压转换器,tll兼容I/O电路,并采用先进的0.8 μ m BiCMOS技术。BiCMOS器件由简单的n阱结构CMOS晶体管和n-p-n双极晶体管组成。该母片已应用于数字信号处理电路中。该芯片包含20k门,包括4个乘法器宏单元和随机逻辑电路。在由双尺寸晶体管组成的随机逻辑电路中,对于FO=3、布线长度为1mm的双输入NAND门,封装密度为240栅极/mm/sup 2/,平均延迟为600ps。在乘法器中,获得了660门/mm/sup /封装密度和450 ps的2输入NAND门(FO=3)的平均延迟
A BiCMOS channelless masterslice with on-chip voltage converter
An approach to solving reliability problems due to voltage tolerance in submicron devices is described which involves lowering the operating voltage using an on-chip voltage conversion system. The masterslice has an on-chip voltage converter, TLL-compatible I/O circuits and uses advanced 0.8- mu m BiCMOS technology. A cross-sectional view of the BiCMOS device, which consists of CMOS transistors with simple n-well structure and an n-p-n bipolar transistor, is shown. The masterslice has been applied to a digital signal processing circuit. The chip contains 20 k gates, including four multiplier macrocells and random logic circuits. In the random logic circuits, which consist of double-size transistors, the packing density is 240 gate/mm/sup 2/, and the average delay is 600 ps for a two-input NAND gate with FO=3 and 1-mm wiring length. In the multipliers, 660 gate/mm/sup 2/ packing density and 450 ps average delay for 2-input NAND gate with FO=3 are attained.<>