W. Chien, Y. C. Chen, K. P. Chang, E. Lai, Y. Yao, P. Lin, J. Gong, S. Tsai, S. Hsieh, C. F. Chen, K. Hsieh, R. Liu, Chih-Yuan Lu
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Multi-Level Operation of Fully CMOS Compatible WOX Resistive Random Access Memory (RRAM)
The multi-level operation of WO
x
based RRAM has been investigated. Improvement of our WO
x
process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.
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