F. Stubenrauch, N. Seliger, M. Schustek, A. Lebedev, D. Schmitt-Landsiedel
{"title":"用于电感耦合直流电源的13.56MHz e类功率放大器,功率附加效率95% (PAE)","authors":"F. Stubenrauch, N. Seliger, M. Schustek, A. Lebedev, D. Schmitt-Landsiedel","doi":"10.1109/EURFID.2015.7332390","DOIUrl":null,"url":null,"abstract":"Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).","PeriodicalId":205916,"journal":{"name":"2015 International EURASIP Workshop on RFID Technology (EURFID)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 13.56MHz class e power amplifier for inductively coupled DC supply with 95% power added efficiency (PAE)\",\"authors\":\"F. Stubenrauch, N. Seliger, M. Schustek, A. Lebedev, D. Schmitt-Landsiedel\",\"doi\":\"10.1109/EURFID.2015.7332390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).\",\"PeriodicalId\":205916,\"journal\":{\"name\":\"2015 International EURASIP Workshop on RFID Technology (EURFID)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International EURASIP Workshop on RFID Technology (EURFID)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EURFID.2015.7332390\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International EURASIP Workshop on RFID Technology (EURFID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EURFID.2015.7332390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 13.56MHz class e power amplifier for inductively coupled DC supply with 95% power added efficiency (PAE)
Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).