快速高k AIN MONOS内存,内存窗口大,保留率好

C. Lai, C.C. Huang, K. Chiang, H. Kao, W. Chen, A. Chin, C. Chi
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引用次数: 4

摘要

我们在新的IrO2-HfAlO-AlN-SiO2-Si MONOS器件中获得了快速100mus程序的良好非易失性存储器完整性和在plusmn13V下的1ms擦除时间,4.5V的大初始存储器窗口,以及在25℃或85℃下的3.8V或2.4V的外推10年存储器窗口
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fast high-k AIN MONOS memory with large memory window and good retention
We have obtained good non-volatile memory device integrity of fast 100mus program and 1ms erase time at plusmn13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85degC in the new IrO2-HfAlO-AlN-SiO2-Si MONOS device
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