热载流子退化对MOSFET小信号输入、输出和传输特性的影响

2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI:10.1109/ICCDCS.2014.7016163

Daniel Garcia-Garcia, V. Vega-Gonzalez, R. Torres‐Torres, E. Gutiérrez-D.

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引用次数: 3

摘要

本文分析了在直流工作至20 GHz的情况下，在100nm以下工作的n型mosfet的热载流子(HC)衰减水平。该分析附有实验结果。降解过程是通过控制直流电流在明确的时间段内的应用来完成的。通过记录直流退化前后的s参数，可以观察到传输和反射特性的相应变化，以及固有通道电阻和跨导的变化。这一分析适用于工作在射频频率范围内的功率CMOS放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of hot carrier degradation on MOSFET small-signal input, output, and transmission features

An analysis of the level of hot carrier (HC) degradation caused in sub-100 nm n-type MOSFETs operated from DC up to 20 GHz, is introduced. The analysis comes accompanied with experimental results. The degradation process is done through the application of controlled DC currents at well defines periods of time. The recorded S-parameters before and after DC degradation allows the observation of the corresponding changes in the transmission and reflection features, as well as in the intrinsic channel resistance and the transconductance. This analysis is relevant for power CMOS amplifiers operating in the RF frequency regime.

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来源期刊

2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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