{"title":"一种基于2v CMOS技术的高压输出缓冲器","authors":"L. Clark","doi":"10.1109/VLSIC.1999.797236","DOIUrl":null,"url":null,"abstract":"VLSI core voltages have scaled considerably below legacy I/O standards such as PCI which require tolerance of voltages between -1 V to over 6 V when power supply deviation and signal overshoot effects are considered. Circuit based dielectric protection has been demonstrated previously to address this problem for 3.3 V on a 2.5 V process. Gate oxide stress is dependent on the total stress time and magnitude of the stress over the life of the chip, which must be limited. Here, a 5 V PCI output buffer implemented on a standard 2 V process is presented which dynamically limits the DC stress to devices below 2.1 V and minimizes AC stress duration.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A high-voltage output buffer fabricated on a 2 V CMOS technology\",\"authors\":\"L. Clark\",\"doi\":\"10.1109/VLSIC.1999.797236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"VLSI core voltages have scaled considerably below legacy I/O standards such as PCI which require tolerance of voltages between -1 V to over 6 V when power supply deviation and signal overshoot effects are considered. Circuit based dielectric protection has been demonstrated previously to address this problem for 3.3 V on a 2.5 V process. Gate oxide stress is dependent on the total stress time and magnitude of the stress over the life of the chip, which must be limited. Here, a 5 V PCI output buffer implemented on a standard 2 V process is presented which dynamically limits the DC stress to devices below 2.1 V and minimizes AC stress duration.\",\"PeriodicalId\":433264,\"journal\":{\"name\":\"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1999.797236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1999.797236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-voltage output buffer fabricated on a 2 V CMOS technology
VLSI core voltages have scaled considerably below legacy I/O standards such as PCI which require tolerance of voltages between -1 V to over 6 V when power supply deviation and signal overshoot effects are considered. Circuit based dielectric protection has been demonstrated previously to address this problem for 3.3 V on a 2.5 V process. Gate oxide stress is dependent on the total stress time and magnitude of the stress over the life of the chip, which must be limited. Here, a 5 V PCI output buffer implemented on a standard 2 V process is presented which dynamically limits the DC stress to devices below 2.1 V and minimizes AC stress duration.