一种基于2v CMOS技术的高压输出缓冲器

L. Clark
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引用次数: 15

摘要

VLSI核心电压已经大大低于传统的I/O标准,如PCI,当考虑电源偏差和信号超调效应时,需要在-1 V到超过6 V之间的电压容限。基于电路的介电保护先前已被证明可以在2.5 V工艺上解决3.3 V的这个问题。栅极氧化物应力取决于总应力时间和芯片寿命期间应力的大小,这必须受到限制。本文提出了一种基于标准2v进程的5v PCI输出缓冲器,该缓冲器动态地将直流应力限制在2.1 V以下的设备上,并最大限度地减少交流应力持续时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high-voltage output buffer fabricated on a 2 V CMOS technology
VLSI core voltages have scaled considerably below legacy I/O standards such as PCI which require tolerance of voltages between -1 V to over 6 V when power supply deviation and signal overshoot effects are considered. Circuit based dielectric protection has been demonstrated previously to address this problem for 3.3 V on a 2.5 V process. Gate oxide stress is dependent on the total stress time and magnitude of the stress over the life of the chip, which must be limited. Here, a 5 V PCI output buffer implemented on a standard 2 V process is presented which dynamically limits the DC stress to devices below 2.1 V and minimizes AC stress duration.
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