A. Pyzyna, R. Bruce, M. Lofaro, H. Tsai, C. Witt, L. Gignac, M. Brink, M. Guillorn, G. Fritz, H. Miyazoe, D. Klaus, E. Joseph, K. Rodbell, C. Lavoie, D. Park
{"title":"7nm节点以上铜互连的电阻率","authors":"A. Pyzyna, R. Bruce, M. Lofaro, H. Tsai, C. Witt, L. Gignac, M. Brink, M. Guillorn, G. Fritz, H. Miyazoe, D. Klaus, E. Joseph, K. Rodbell, C. Lavoie, D. Park","doi":"10.1109/VLSIT.2015.7223712","DOIUrl":null,"url":null,"abstract":"The resistivity of damascene copper is measured at pitch ranging down to 40 nm and copper cross-sectional area as low as 140 nm2. Metallization by copper reflow is demonstrated at 28 nm pitch with patterning by directed self-assembly (DSA). Extremely low line-edge-roughness (LER) is attained by surface reconstruction of a single crystal silicon mask. Variation of LER is found to have no impact on resistivity. A resistivity benefit is found for wires with nearly bamboo grain structure, offering the promise of improved performance beyond the 7 nm node if grain size can be controlled.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Resistivity of copper interconnects beyond the 7 nm node\",\"authors\":\"A. Pyzyna, R. Bruce, M. Lofaro, H. Tsai, C. Witt, L. Gignac, M. Brink, M. Guillorn, G. Fritz, H. Miyazoe, D. Klaus, E. Joseph, K. Rodbell, C. Lavoie, D. Park\",\"doi\":\"10.1109/VLSIT.2015.7223712\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The resistivity of damascene copper is measured at pitch ranging down to 40 nm and copper cross-sectional area as low as 140 nm2. Metallization by copper reflow is demonstrated at 28 nm pitch with patterning by directed self-assembly (DSA). Extremely low line-edge-roughness (LER) is attained by surface reconstruction of a single crystal silicon mask. Variation of LER is found to have no impact on resistivity. A resistivity benefit is found for wires with nearly bamboo grain structure, offering the promise of improved performance beyond the 7 nm node if grain size can be controlled.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223712\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistivity of copper interconnects beyond the 7 nm node
The resistivity of damascene copper is measured at pitch ranging down to 40 nm and copper cross-sectional area as low as 140 nm2. Metallization by copper reflow is demonstrated at 28 nm pitch with patterning by directed self-assembly (DSA). Extremely low line-edge-roughness (LER) is attained by surface reconstruction of a single crystal silicon mask. Variation of LER is found to have no impact on resistivity. A resistivity benefit is found for wires with nearly bamboo grain structure, offering the promise of improved performance beyond the 7 nm node if grain size can be controlled.
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