采用热敏电阻定义电流源的0.148nJ/转换65nm SOTB温度传感器LSI

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309211

Shinya Nii, K. Ishibashi

{"title":"采用热敏电阻定义电流源的0.148nJ/转换65nm SOTB温度传感器LSI","authors":"Shinya Nii, K. Ishibashi","doi":"10.1109/S3S.2017.8309211","DOIUrl":null,"url":null,"abstract":"This paper presents an ambient temperature sensor LSI utilizing a thermistor which defines the current of the CCO (current controlled oscillator) on 65nm SOTB process. The temperature sensor measures the ambient temperature with the power consumption of 531nW and 0.148nJ/conversion. This occupies an area of 5863μm<sup>2</sup>. The measurement temperature range was from −50 ° C to 50 ° C, and the resolution was 0.04 ° C.","PeriodicalId":333587,"journal":{"name":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 0.148nJ/conversion 65nm SOTB temperature sensor LSI using thermistor-defined current source\",\"authors\":\"Shinya Nii, K. Ishibashi\",\"doi\":\"10.1109/S3S.2017.8309211\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an ambient temperature sensor LSI utilizing a thermistor which defines the current of the CCO (current controlled oscillator) on 65nm SOTB process. The temperature sensor measures the ambient temperature with the power consumption of 531nW and 0.148nJ/conversion. This occupies an area of 5863μm<sup>2</sup>. The measurement temperature range was from −50 ° C to 50 ° C, and the resolution was 0.04 ° C.\",\"PeriodicalId\":333587,\"journal\":{\"name\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2017.8309211\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2017.8309211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一种采用热敏电阻的环境温度传感器LSI，该热敏电阻定义了65nm SOTB工艺上CCO(电流控制振荡器)的电流。温度传感器测量环境温度，功耗为531nW，功耗为0.148nJ/转换。占地面积为5863μm2。测量温度范围为- 50℃~ 50℃，分辨率为0.04℃。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 0.148nJ/conversion 65nm SOTB temperature sensor LSI using thermistor-defined current source

This paper presents an ambient temperature sensor LSI utilizing a thermistor which defines the current of the CCO (current controlled oscillator) on 65nm SOTB process. The temperature sensor measures the ambient temperature with the power consumption of 531nW and 0.148nJ/conversion. This occupies an area of 5863μm². The measurement temperature range was from −50 ° C to 50 ° C, and the resolution was 0.04 ° C.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

自引率

0.00%

发文量