{"title":"III-V型材料中的异质反位缺陷","authors":"P. Omling","doi":"10.1109/SIM.1992.752672","DOIUrl":null,"url":null,"abstract":"The properties of hetero-antisite impurities in III-V semiconductors are, reviewed. The present understanding of the best known case, the Sb/sub Ga/ double-donor hetero-antisite defect in GaAs, is presented in detail, and the formation mechanisms, the spin resonance properties, the electronic structure, including our theoretical understanding of it, are described. Finally, a comparison with properties of the As/sub Ga/- related EL2 defect is made.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hetero-antisite defects in III-V materials\",\"authors\":\"P. Omling\",\"doi\":\"10.1109/SIM.1992.752672\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The properties of hetero-antisite impurities in III-V semiconductors are, reviewed. The present understanding of the best known case, the Sb/sub Ga/ double-donor hetero-antisite defect in GaAs, is presented in detail, and the formation mechanisms, the spin resonance properties, the electronic structure, including our theoretical understanding of it, are described. Finally, a comparison with properties of the As/sub Ga/- related EL2 defect is made.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752672\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The properties of hetero-antisite impurities in III-V semiconductors are, reviewed. The present understanding of the best known case, the Sb/sub Ga/ double-donor hetero-antisite defect in GaAs, is presented in detail, and the formation mechanisms, the spin resonance properties, the electronic structure, including our theoretical understanding of it, are described. Finally, a comparison with properties of the As/sub Ga/- related EL2 defect is made.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
