蜂窝应用中高压射频功率SiGe晶体管的优化[HBTs]

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289) Pub Date : 1999-09-21 DOI:10.1109/MIAME.1999.827839

O. Bengtsson, T. Johansson, E. Nordlander, A. Rydberg

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引用次数: 0

摘要

采用二维工艺和器件仿真技术，研究了外延SiGe基板的高压射频功率硅晶体管的基型设计。在基底中加入Ge使得极薄的基底宽度和非常高的基底掺杂成为可能。这就产生了更高的最大振荡频率，从而提高了这些器件的临界功率增益。

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Optimization of high-voltage RF power SiGe transistors for cellular applications [HBTs]

The base profile design for high-voltage RF power silicon transistors with epitaxial SiGe base was studied using 2-D process and device simulations. The addition of Ge in the base makes thin base widths with very high base doping possible. This gives rise to a higher maximum oscillation frequency thus improving the critical power gain for these devices.

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Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)

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