一个28nm-CMOS 100MHz 1mW 12dBm-IIP3四阶翻转源跟随器模拟滤波器

F. Fary, M. Matteis, T. Vergine, A. Baschirotto
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引用次数: 4

摘要

本文介绍了一种基于翻转源跟随器级的100mhz - 3db带宽模拟滤波器的设计,采用28nm cmos技术。由于适当的本地环路,该滤波器具有较大的带内线性,其在设计层面的优化可以屏蔽占主导地位的源-跟随器输入晶体管噪声功率。与最先进的源跟随器滤波器相比,这可以实现更好的噪声/线性度与功率效率之间的权衡。该电路实现了四阶巴特沃斯低通传递函数,在单个1V电源电压下,以968 μ W功耗实现12.5dBm IIP3。带内噪声功率谱密度为8nV/√Hz,带内集成噪声为98µVRMS。20mhz时的总谐波失真为- 40dB,单音输出信号为- 6dBm,动态范围为64dB。所获得的品质系数(160.5 J−1)与最先进的产品相比非常有利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 28nm-CMOS 100MHz 1mW 12dBm-IIP3 4th-Order Flipped-Source-Follower Analog Filter
This paper presents the design in 28nm-CMOS technology of a 100MHz–3dB-bandwidth analog filter based on the Flipped-Source-Follower stage. The filter performs large inband linearity thanks to a proper local loop, whose optimization at design level can be shielded from the Source-Follower input transistor that dominates the noise power. This enables better noise/linearity trade-off vs. power efficiency comparing with the Source-Follower filters state-of-the-art. The circuit implements a 4th-order Butterworth low-pass transfer function and achieves 12.5dBm IIP3 at 968µW power consumption from a single 1V supply voltage. The in-band noise power spectral density is 8nV/√Hz resulting in an in-band integrated noise of 98µVRMS. Total Harmonic Distortion at 20 MHz is −40dB with −6dBm single tone output signal, resulting in 64dB Dynamic Range. The achieved Figure-of-Merit (160.5 J−1) compares very favorably with the state-of-the-art.
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