{"title":"一个28nm-CMOS 100MHz 1mW 12dBm-IIP3四阶翻转源跟随器模拟滤波器","authors":"F. Fary, M. Matteis, T. Vergine, A. Baschirotto","doi":"10.1109/ESSCIRC.2018.8494263","DOIUrl":null,"url":null,"abstract":"This paper presents the design in 28nm-CMOS technology of a 100MHz–3dB-bandwidth analog filter based on the Flipped-Source-Follower stage. The filter performs large inband linearity thanks to a proper local loop, whose optimization at design level can be shielded from the Source-Follower input transistor that dominates the noise power. This enables better noise/linearity trade-off vs. power efficiency comparing with the Source-Follower filters state-of-the-art. The circuit implements a 4th-order Butterworth low-pass transfer function and achieves 12.5dBm IIP3 at 968µW power consumption from a single 1V supply voltage. The in-band noise power spectral density is 8nV/√Hz resulting in an in-band integrated noise of 98µVRMS. Total Harmonic Distortion at 20 MHz is −40dB with −6dBm single tone output signal, resulting in 64dB Dynamic Range. The achieved Figure-of-Merit (160.5 J−1) compares very favorably with the state-of-the-art.","PeriodicalId":355210,"journal":{"name":"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 28nm-CMOS 100MHz 1mW 12dBm-IIP3 4th-Order Flipped-Source-Follower Analog Filter\",\"authors\":\"F. Fary, M. Matteis, T. Vergine, A. Baschirotto\",\"doi\":\"10.1109/ESSCIRC.2018.8494263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design in 28nm-CMOS technology of a 100MHz–3dB-bandwidth analog filter based on the Flipped-Source-Follower stage. The filter performs large inband linearity thanks to a proper local loop, whose optimization at design level can be shielded from the Source-Follower input transistor that dominates the noise power. This enables better noise/linearity trade-off vs. power efficiency comparing with the Source-Follower filters state-of-the-art. The circuit implements a 4th-order Butterworth low-pass transfer function and achieves 12.5dBm IIP3 at 968µW power consumption from a single 1V supply voltage. The in-band noise power spectral density is 8nV/√Hz resulting in an in-band integrated noise of 98µVRMS. Total Harmonic Distortion at 20 MHz is −40dB with −6dBm single tone output signal, resulting in 64dB Dynamic Range. The achieved Figure-of-Merit (160.5 J−1) compares very favorably with the state-of-the-art.\",\"PeriodicalId\":355210,\"journal\":{\"name\":\"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2018.8494263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2018.8494263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 28nm-CMOS 100MHz 1mW 12dBm-IIP3 4th-Order Flipped-Source-Follower Analog Filter
This paper presents the design in 28nm-CMOS technology of a 100MHz–3dB-bandwidth analog filter based on the Flipped-Source-Follower stage. The filter performs large inband linearity thanks to a proper local loop, whose optimization at design level can be shielded from the Source-Follower input transistor that dominates the noise power. This enables better noise/linearity trade-off vs. power efficiency comparing with the Source-Follower filters state-of-the-art. The circuit implements a 4th-order Butterworth low-pass transfer function and achieves 12.5dBm IIP3 at 968µW power consumption from a single 1V supply voltage. The in-band noise power spectral density is 8nV/√Hz resulting in an in-band integrated noise of 98µVRMS. Total Harmonic Distortion at 20 MHz is −40dB with −6dBm single tone output signal, resulting in 64dB Dynamic Range. The achieved Figure-of-Merit (160.5 J−1) compares very favorably with the state-of-the-art.