一种可扩展的金属-绝缘体-金属电容器工艺，用于0.35至0.18 /spl μ m模拟和RFCMOS

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981465

K. Shao, S. Chu, K. Chew, Guan-Ping Wu, C. Ng, N. Tan, B. Shen, A. Yin, Zhe Zheng

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引用次数: 5

摘要

研究了用于高密度金属-绝缘子-金属(MIM)电容器(1.0 fF//spl mu/m/sup 2/)顶板的两种不同材料的极板。比较了两种MIM电容器的工艺差异。它们的工艺与标准逻辑工艺非常兼容，可以轻松集成到0.35 /spl mu/m至0.18 /spl mu/m的AlCu互连BEOL工艺中。两者均显示出良好的直流电气参数结果。它们的温度、电压系数和匹配数据符合大多数模拟设计人员的需求。在2.45 GHz频率下，测得的Q值大于80。

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A scaleable metal-insulator-metal capacitors process for 0.35 to 0.18 /spl mu/m analog and RFCMOS

Two different material plates used for a high density metal-insulator-metal (MIM) capacitor (1.0 fF//spl mu/m/sup 2/) top plate are studied. The two MIM capacitor process differences are compared. Their processes are very compatible with standard logic processes, and can be easily integrated into 0.35 /spl mu/m down to 0.18 /spl mu/m AlCu interconnection BEOL process. Both demonstrated good DC electrical parameter results. Their temperature, voltage coefficient and matching data fit meet the needs of most analog designers. A Q value >80 at 2.45 GHz was also achieved from the RF measurement.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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