A. Khanmohammadi, R. Enne, M. Hofbauer, H. Zimmermann
{"title":"高压CMOS技术中的单片集成光随机脉冲发生器","authors":"A. Khanmohammadi, R. Enne, M. Hofbauer, H. Zimmermann","doi":"10.1109/ESSDERC.2015.7324732","DOIUrl":null,"url":null,"abstract":"A monolithically integrated optoelectronic device is realized in 0.35um high voltage CMOS technology. It consists of a ring shaped single-photon avalanche diode (SPAD) around a Si-CMOS-LED to generate random events. The LED-emitted photons transmit through the short distance between the Si-LED and SPAD and some of them can be detected by the SPAD. In this device, time intervals between single-photon events are independent quantum random variables. Experimental results show an increase of more than a factor of three in the photon counting rate compared to earlier reported results.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Monolithically integrated optical random pulse generator in high voltage CMOS technology\",\"authors\":\"A. Khanmohammadi, R. Enne, M. Hofbauer, H. Zimmermann\",\"doi\":\"10.1109/ESSDERC.2015.7324732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithically integrated optoelectronic device is realized in 0.35um high voltage CMOS technology. It consists of a ring shaped single-photon avalanche diode (SPAD) around a Si-CMOS-LED to generate random events. The LED-emitted photons transmit through the short distance between the Si-LED and SPAD and some of them can be detected by the SPAD. In this device, time intervals between single-photon events are independent quantum random variables. Experimental results show an increase of more than a factor of three in the photon counting rate compared to earlier reported results.\",\"PeriodicalId\":332857,\"journal\":{\"name\":\"2015 45th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 45th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2015.7324732\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 45th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2015.7324732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithically integrated optical random pulse generator in high voltage CMOS technology
A monolithically integrated optoelectronic device is realized in 0.35um high voltage CMOS technology. It consists of a ring shaped single-photon avalanche diode (SPAD) around a Si-CMOS-LED to generate random events. The LED-emitted photons transmit through the short distance between the Si-LED and SPAD and some of them can be detected by the SPAD. In this device, time intervals between single-photon events are independent quantum random variables. Experimental results show an increase of more than a factor of three in the photon counting rate compared to earlier reported results.
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