H. Kitahata, H. Takemura, T. Suzaki, M. Soda, T. Morikawa, H. Tezuka, C. Ogawa, S. Fujita, T. Tashiro
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引用次数: 5
摘要
作者描述了一种高性能硅双极前置放大器，其带宽为15.5 ghz，透阻增益为52 dB ω。为了实现如此高的性能，电路中反馈参数的优化和46 ghz f/sub max/(最大振荡频率)晶体管的实现同时进行。电路由增益级和缓冲级组成。在增益级设计中采用双反馈配置，前置放大器具有宽带和低噪声特性。给出了使用优化电路和改进晶体管的前置放大器的频率响应测量结果。
The authors describe an extremely high performance Si bipolar preamplifier, which has a 15.5-GHz bandwidth with a transimpedance gain of 52 dB Omega . To achieve such high performance, the optimization of feedback parameters in the circuit and the realization of the 46-GHz f/sub max/ (maximum frequency of oscillation) transistor were carried out simultaneously. The circuit consists of gain and buffer stages. Employing a dual-feedback configuration in the gain stage design, the preamplifier has broadband and low-noise characteristics. The measured frequency response of the preamplifier, using the optimized circuit and the improved transistors, is shown.<>
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