自旋-传递-扭矩MRAM:存储器的下一次革命

2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI:10.1109/IMW52921.2022.9779288

D. Worledge

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引用次数: 7

摘要

本文介绍了自旋-传递-转矩磁阻随机存取存储器(STT-MRAM)的工作原理和特点，并简要介绍了该领域的发展历史。然后介绍了STT-MRAM的四种主要应用。回顾了垂直STT-MRAM的初步演示和IBM公司对该技术的后续发展。最后，介绍了几种通往更高级应用的潜在途径。

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Spin-Transfer-Torque MRAM: the Next Revolution in Memory

This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four main applications of STT-MRAM are described. A review is given of the initial demonstration of perpendicular STT-MRAM and the subsequent development of this technology at IBM. Finally, several potential paths forward to more advanced applications are described.

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2022 IEEE International Memory Workshop (IMW)

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