Saeed Abdolhosseini, H. Kaatuzian, Bahram Choupanzadeh
{"title":"应变量子阱慢光器件的v型EIT分析与仿真","authors":"Saeed Abdolhosseini, H. Kaatuzian, Bahram Choupanzadeh","doi":"10.1109/IRANIANCEE.2017.7985459","DOIUrl":null,"url":null,"abstract":"This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.","PeriodicalId":161929,"journal":{"name":"2017 Iranian Conference on Electrical Engineering (ICEE)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis and simulation of strained quantum wells slow light devices according to V-type EIT\",\"authors\":\"Saeed Abdolhosseini, H. Kaatuzian, Bahram Choupanzadeh\",\"doi\":\"10.1109/IRANIANCEE.2017.7985459\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.\",\"PeriodicalId\":161929,\"journal\":{\"name\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"volume\":\"147 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2017.7985459\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Iranian Conference on Electrical Engineering (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2017.7985459","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis and simulation of strained quantum wells slow light devices according to V-type EIT
This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.