应变量子阱慢光器件的v型EIT分析与仿真

Saeed Abdolhosseini, H. Kaatuzian, Bahram Choupanzadeh
{"title":"应变量子阱慢光器件的v型EIT分析与仿真","authors":"Saeed Abdolhosseini, H. Kaatuzian, Bahram Choupanzadeh","doi":"10.1109/IRANIANCEE.2017.7985459","DOIUrl":null,"url":null,"abstract":"This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.","PeriodicalId":161929,"journal":{"name":"2017 Iranian Conference on Electrical Engineering (ICEE)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis and simulation of strained quantum wells slow light devices according to V-type EIT\",\"authors\":\"Saeed Abdolhosseini, H. Kaatuzian, Bahram Choupanzadeh\",\"doi\":\"10.1109/IRANIANCEE.2017.7985459\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.\",\"PeriodicalId\":161929,\"journal\":{\"name\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"volume\":\"147 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2017.7985459\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Iranian Conference on Electrical Engineering (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2017.7985459","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文研究并改进了慢光器件的光学性能。器件结构由基于v型电磁感应透明(EIT)的GaAs/AlGaAs[110]应变量子阱(QWs)组成。本文采用分数维解析模型对慢光器件进行仿真分析。研究了井宽变化对激子振子强度和分数维参数的影响。这些参数的变化对慢光系统的光学特性如慢化因子(SDF)和器件中心能量的影响已经得到了说明。根据得到的结果,我们可以通过控制井厚来调节慢光系统的光学变量。利用所提出的方法,我们还估计了SDF在9×103附近的最大值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis and simulation of strained quantum wells slow light devices according to V-type EIT
This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.
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