Numerical simulations of parametric amplification of space charge waves in Zincblende structure n-GaN film

Three-wave non-linear interactions of space charge waves (SCW) in n-GaN films placed onto a semi-infinite substrate, possessing the negative differential mobility, are analyzed and simulated numerically. An effective frequency up-conversion with amplification in millimeter wave range is demonstrated. When compared with a case of the n-GaAs film, it is possible to observe an amplification of SCW in n-GaN films of submicron thicknesses at essentially higher frequencies f ≥ 100 GHz.