金属化学机械抛光盘的建模

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Pub Date : 2000-12-12 DOI:10.1109/IEDM.2000.904364

V. Nguyen, P. van der Velden, R. Daamen, H. van Kranenburg, P. Woerlee

{"title":"金属化学机械抛光盘的建模","authors":"V. Nguyen, P. van der Velden, R. Daamen, H. van Kranenburg, P. Woerlee","doi":"10.1109/IEDM.2000.904364","DOIUrl":null,"url":null,"abstract":"In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Modelling of dishing for metal chemical mechanical polishing\",\"authors\":\"V. Nguyen, P. van der Velden, R. Daamen, H. van Kranenburg, P. Woerlee\",\"doi\":\"10.1109/IEDM.2000.904364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter.\",\"PeriodicalId\":276800,\"journal\":{\"name\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2000.904364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

本文提出了金属化学机械抛光(CMP)过程中盘形发展的物理模型。该模型的主要假设是材料去除主要发生在焊盘/晶圆接触处。首先研究了衬垫/晶圆接触尺寸的分布。该分布被用作材料去除率对线宽依赖的模型的输入。一个关系，描述发展的盘子作为一个函数的过度抛光时间将提出。该模型只使用一个自由参数，就能很准确地描述观测到的碟形效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modelling of dishing for metal chemical mechanical polishing

In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter.

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International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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