N. Lukvanchikova, M. Petrichuk, M. Garbar, E. Simoen, C. Claeys
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Results on noise examination of fully-depleted accumulation mode SOI pMOSFETs
Noise spectroscopy of levels is known to be a high-sensitive method for detection of defects, determination of their parameters and elucidation of their nature. This method is based on the analysis of generation-recombination noise that accompanies the processes of charge carrier capture and release on different centers in a semiconductor material or device. The purpose of this paper is to demonstrate the efficiency of the application of low-frequency noise methods for characterization of thin film fully-depleted accumulation mode SOI pMOSFETs.
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