MU-RMW:在SMR磁盘的嵌入式闪存中最小化不必要的RMW操作

Chenlin Ma, Zhuokai Zhou, Yingping Wang, Yi Wang, Rui Mao
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引用次数: 2

摘要

新型叠层磁记录磁盘通过叠层方向重叠多道磁道,可以显著提高存储容量。然而,这种带状结构会导致SMR磁盘内部RMW操作造成严重的写放大。作为主流的固态存储技术,NAND闪存具有体积小、性价比高、性能优越等优点,适合并有望集成到SMR磁盘中,以提升系统性能。在这种混合嵌入式存储系统(即嵌入式闪存与SMR磁盘(EF-SMR)系统)中,我们观察到物理闪存块可以包含与不同SMR数据带相关的混合数据;当垃圾收集这些闪存块时,会触发多个RMW操作来重写相关的SMR频带,从而进一步提高性能。因此,在本文中,我们首次提出了MU-RMW来保证来自不同SMR波段的数据不会在闪存块中混淆,目的是尽量减少不必要的RMW操作。通过实际和密集的I/O工作负载对MU-RMW的有效性进行了评估,结果令人鼓舞。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
MU-RMW: Minimizing Unnecessary RMW Operations in the Embedded Flash with SMR Disk
Emerging Shingled Magnetic Recording (SMR) Disk can improve the storage capacity significantly by overlapping multiple tracks with the shingled direction. However, the shingled-like structure leads to severe write amplification caused by RMW operations inner SMR disks. As the mainstream solid-state storage technology, NAND flash has the advantages of tiny size, cost-effective, high performance, making it suitable and promising to be incorporated into SMR disks to boost the system performance. In this hybrid embedded storage system (i.e., the Embedded Flash with SMR disk (EF-SMR) system), we observe that physical flash blocks can contain a mixture of data associated with different SMR data bands; when garbage collecting such flash blocks, multiple RMW operations are triggered to rewrite the involved SMR bands and the performance is further exacerbated. Therefore, in this paper, we for the first time present MU-RMW to guarantee data from different SMR bands will not be mixed up within the flash blocks with an aim at minimizing unnecessary RMW operations. The effectiveness of MU-RMW was evaluated with realistic and intensive I/O workloads and the results are encouraging.
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