用作放大器的短通道无结纳米线晶体管谐波失真分析

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI:10.1109/S3S.2013.6716569

R. Doria, R. Trevisoli, M. de Souza, M. Pavanello

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引用次数: 3

摘要

本文对几种L的p型和n型无结纳米线晶体管(JNTs)的非线性进行了实验分析。结果表明，在固定的输入偏置VA下，由于RS效应降低，HD2随着L的升高而降低;在目标V0下，由于较小的通道长度调制导致较大的AV, HD2随着L的增加而提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Harmonic distortion analysis of short channel junctionless nanowire transistors operating as amplifiers

This work presented an experimental analysis of the nonlinearity of p- and n-type JNTs (junctionless nanowire transistors) of several L. It is shown that, at a fixed input bias V_A, HD2 degrades with the raise of L due to lower the effect of R_S and at a targeted V₀, HD2 improves with L increase owing to the larger A_V resulting from the smaller channel length modulation.

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2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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