4kV 4H-SiC外延发射极双极结晶体管

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488008

S. Balachandran, T. Chow, A. Agarwal, C. Scozzie, K. Jones

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引用次数: 10

摘要

在本文中，我们提出了开基极阻断电压(BVCEO)为4000V (4H-SiC BJT工作的上限)的4H-SiC BJT，比导通电阻(Ron,sp)为56兆欧米伽-厘米2，共发射极电流增益β ~ 9。这些器件采用交叉指状的基极和具有多个发射极条纹的发射极指状设计。我们评估了设计(发射极条纹宽度和接触间距)对器件性能的影响，并研究了发射极接触电阻对器件正向导通特性的影响

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4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

In this paper we present 4H-SiC BJTs with open-base blocking voltage (BVCEO) of 4000V (the upper limit for 4H-SiC BJT operation), specific on-resistance (Ron,sp)of 56 mOmega-cm 2, and common-emitter current gain beta ~ 9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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