超薄体和大块氧化mosfet的结致变化和可靠性

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898123

W. Yeh, W. Chang, Po-Ying Chen, Cheng-li Lin

{"title":"超薄体和大块氧化mosfet的结致变化和可靠性","authors":"W. Yeh, W. Chang, Po-Ying Chen, Cheng-li Lin","doi":"10.1109/IPFA.2014.6898123","DOIUrl":null,"url":null,"abstract":"In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device's driving capability and sub-threshold swing, but makes the transistor forward and reverse characteristics unsymmetrical. Compared to high dose junction profile UTBB-SOI device, low dose junction profile device is less sensitive to substrate bias effect. After hot carrier stressing, low junction dose device with lower impact ionization exhibits better device reliability than high junction dose one.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Junction induced variation and reliability for ultra-thin-body and bulk oxide MOSFETs\",\"authors\":\"W. Yeh, W. Chang, Po-Ying Chen, Cheng-li Lin\",\"doi\":\"10.1109/IPFA.2014.6898123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device's driving capability and sub-threshold swing, but makes the transistor forward and reverse characteristics unsymmetrical. Compared to high dose junction profile UTBB-SOI device, low dose junction profile device is less sensitive to substrate bias effect. After hot carrier stressing, low junction dose device with lower impact ionization exhibits better device reliability than high junction dose one.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898123\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，我们研究了结剂量分布(LDD/halo)对超薄体和绝缘体(UTBB SOI)氧化硅nMOSFET器件特性变化和对称性的影响。还研究了器件性能和热载流子引起的退化。高结掺杂轮廓会提高器件的驱动能力和亚阈值摆幅，但会使晶体管的正反向特性不对称。与高剂量结型UTBB-SOI器件相比，低剂量结型器件对衬底偏置效应的敏感性较低。在热载流子应力作用下，低结剂量、低冲击电离的器件比高结剂量器件表现出更好的器件可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Junction induced variation and reliability for ultra-thin-body and bulk oxide MOSFETs

In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device's driving capability and sub-threshold swing, but makes the transistor forward and reverse characteristics unsymmetrical. Compared to high dose junction profile UTBB-SOI device, low dose junction profile device is less sensitive to substrate bias effect. After hot carrier stressing, low junction dose device with lower impact ionization exhibits better device reliability than high junction dose one.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

自引率

0.00%

发文量