具有低漏电流和电容的1.5kV新型4H-SiC横向通道(LC) JBS整流器

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488006

Lin Zhu, Canhua Li, T. Chow, I. Bhat, K. Jones, C. Scozzie, A. Agarwal

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引用次数: 3

摘要

我们提出了一种新的1.5kV JBS整流器结构，称为LC-JBS整流器，具有更低的反向漏电流和更快的开关速度。在植入的p+埋藏层上采用外皮再生技术制备了测试装置。我们已经在正向降(<1.8V)和反向漏特性接近PiN整流器之间取得了性能折衷，同时LC-JBS整流器的结电容与传统肖特基整流器相比降低了50%

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1.5kV Novel 4H-SiC Lateral Channel (LC) JBS Rectifiers with Low Leakage Current and Capacitance

We propose and experimentally demonstrate a novel 1.5kV JBS rectifier structure called LC-JBS rectifier that offers a lower reverse leakage current and faster switching speed. Test devices were fabricated using an epi regrowth technology over implanted p+ buried layer. We have obtained performance trade-offs between forward drop (<1.8V) with reverse leakage characteristics approaching that of PiN rectifiers, together with ~50% reduction of junction capacitance for LC-JBS rectifiers when compared to conventional Schottky rectifiers

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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