{"title":"碳基存储系统的潜力","authors":"Mark Brehob, R. Enbody","doi":"10.1109/MTDT.1999.782691","DOIUrl":null,"url":null,"abstract":"It seems likely that density concerns will force the DRAM community to consider using radically different schemes for the implementation of memory devices. We propose using nano-scale carbon structures as the basis for a memory device. A single-wall carbon nanotube would contain a charged buckyball. That buckyball will stick tightly to one end of the tube or the other. We assign the bit value of the device depending on which side of the tube the ball is. The result is a high-speed, non-volatile bit of memory. We propose a number of schemes for the interconnection of these devices and examine some of the known electrical issues.","PeriodicalId":166999,"journal":{"name":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"The potential of carbon-based memory systems\",\"authors\":\"Mark Brehob, R. Enbody\",\"doi\":\"10.1109/MTDT.1999.782691\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It seems likely that density concerns will force the DRAM community to consider using radically different schemes for the implementation of memory devices. We propose using nano-scale carbon structures as the basis for a memory device. A single-wall carbon nanotube would contain a charged buckyball. That buckyball will stick tightly to one end of the tube or the other. We assign the bit value of the device depending on which side of the tube the ball is. The result is a high-speed, non-volatile bit of memory. We propose a number of schemes for the interconnection of these devices and examine some of the known electrical issues.\",\"PeriodicalId\":166999,\"journal\":{\"name\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1999.782691\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1999.782691","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
It seems likely that density concerns will force the DRAM community to consider using radically different schemes for the implementation of memory devices. We propose using nano-scale carbon structures as the basis for a memory device. A single-wall carbon nanotube would contain a charged buckyball. That buckyball will stick tightly to one end of the tube or the other. We assign the bit value of the device depending on which side of the tube the ball is. The result is a high-speed, non-volatile bit of memory. We propose a number of schemes for the interconnection of these devices and examine some of the known electrical issues.