Ta清除电极在可扩展的低电流操作TiN\Ta2O5\Ta RRAM器件的出色开关控制和可靠性中的作用

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894401

L. Goux, A. Fantini, A. Redolfi, C. Y. Chen, F. Shi, R. Degraeve, Y. Chen, Thomas Witters, Guido Groeseneken, Malgorzata Jurczak

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引用次数: 44

摘要

我们使用低至3nm的基于ald的Ta2O5设计可扩展且cmos友好的RRAM堆栈。在50μA工作的20nm尺寸TiN\Ta2O5\Ta器件在中等电压(109写入续航时间)下具有超快的写入速度(~5ns)。我们还证明了优异的干扰和保留特性，我们认为这与通过Ta清除剂材料和厚度适当调整沿丝的氧化学势分布有关。

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Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device

We engineer a scalable and CMOS-friendly RRAM stack using down to 3nm ALD-based Ta₂O₅. The 20nm-sized TiN\Ta₂O₅\Ta device operated at 50μA exhibits ultra-fast write (~5ns) at moderate voltage (<;2V) with >10⁹ write endurance. We also demonstrate excellent disturb and retention characteristics, which we relate to the appropriate tuning of the oxygen chemical-potential profile along the filament by means of the Ta scavenger material and thickness.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

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