在70nm DRAM 300mm晶圆厂的光刻热点发现:使用设计基础分组确定工艺窗口

Ray Yen, Daniel Chen, Mingjen Cheng, Andy Lan, Damian Chen, R. Ghaskadvi, E. Chang
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引用次数: 1

摘要

识别热点(限制光刻工艺窗口的结构)变得越来越重要,因为该行业严重依赖RET来打印亚波长设计。KLA-Tencor的专利工艺窗口鉴定(PWQ)方法已在各种晶圆厂中用于此目的。PWQ方法有三个关键优势:(a) PWQ布局-获得最佳灵敏度;(b)基于设计的Binning -用于模式重复器分析;(c)智能采样-用于最佳DOI采样率。本文评估了在intera存储器公司成功部署的两种不同的SEM审查抽样分析策略。我们提出了一种位置中继器和方向中继器相结合的新方法。根据最近的一个案例研究,新的采样流程将数据分析和采样时间从6小时减少到1.5小时,保持最大的DOI采样率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Lithography hotspot discovery at 70nm DRAM 300mm fab: Process Window Qualification using Design Base Binning
Identifying hotspots - structures that limit the lithography process window - become increasingly important as the industry relies heavily on RET to print subwavelength designs. KLA-Tencor's patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout - to obtain the best sensitivity (b) Design Based Binning - for pattern repeater analysis (c) Intelligent sampling - for the best DOI sampling rate. This paper evaluates two different analysis stratagies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.
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