基于pso的纳米级DG mosfet研究新方法

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era Pub Date : 2010-03-23 DOI:10.1109/DTIS.2010.5487571

T. Bendib, F. Djeffal, M. Abdi

{"title":"基于pso的纳米级DG mosfet研究新方法","authors":"T. Bendib, F. Djeffal, M. Abdi","doi":"10.1109/DTIS.2010.5487571","DOIUrl":null,"url":null,"abstract":"The Double Gate (DG) MOSFET has been proposed as potential alternative to the conventional bulk CMOS structure for extended CMOS scalability beyond 30 nm partly due to its immunity to short channel effects. So, the objective of this work is to provide an accurate drain current model based on an automatic parameter extraction method with PSO (Particle Swarm Optimization) for Current-Voltage-based MOSFET models. Extracted parameter values reproduce I–V characteristics within 5% RMS error for wide range of gate lengths. It is shown that the I–V characteristics predicted by our analytical model are in close agreement with 2-D numerical simulation results.","PeriodicalId":423978,"journal":{"name":"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new PSO-based approach to study the nanoscale DG MOSFETs\",\"authors\":\"T. Bendib, F. Djeffal, M. Abdi\",\"doi\":\"10.1109/DTIS.2010.5487571\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Double Gate (DG) MOSFET has been proposed as potential alternative to the conventional bulk CMOS structure for extended CMOS scalability beyond 30 nm partly due to its immunity to short channel effects. So, the objective of this work is to provide an accurate drain current model based on an automatic parameter extraction method with PSO (Particle Swarm Optimization) for Current-Voltage-based MOSFET models. Extracted parameter values reproduce I–V characteristics within 5% RMS error for wide range of gate lengths. It is shown that the I–V characteristics predicted by our analytical model are in close agreement with 2-D numerical simulation results.\",\"PeriodicalId\":423978,\"journal\":{\"name\":\"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era\",\"volume\":\"2014 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTIS.2010.5487571\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2010.5487571","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

双栅(DG) MOSFET已被提出作为传统CMOS体结构的潜在替代品，用于扩展CMOS可扩展性超过30 nm，部分原因是其对短通道效应的免疫。因此，本文的目标是基于基于电流-电压的MOSFET模型的PSO(粒子群优化)参数自动提取方法，提供一个精确的漏极电流模型。在宽栅极长度范围内，提取的参数值在5%的RMS误差范围内再现I-V特性。结果表明，本文所建立的解析模型预测的I-V特性与二维数值模拟结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A new PSO-based approach to study the nanoscale DG MOSFETs

The Double Gate (DG) MOSFET has been proposed as potential alternative to the conventional bulk CMOS structure for extended CMOS scalability beyond 30 nm partly due to its immunity to short channel effects. So, the objective of this work is to provide an accurate drain current model based on an automatic parameter extraction method with PSO (Particle Swarm Optimization) for Current-Voltage-based MOSFET models. Extracted parameter values reproduce I–V characteristics within 5% RMS error for wide range of gate lengths. It is shown that the I–V characteristics predicted by our analytical model are in close agreement with 2-D numerical simulation results.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era

自引率

0.00%

发文量