在直流链路电压为400 V时,采用常关GaN器件的4kw降压变换器的电气设计考虑

Philipp Schülting, Dominik Kubon, R. D. De Doncker
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引用次数: 5

摘要

GaN功率半导体器件在功率变换器中显示出在400 V电压范围内实现高功率密度的良好性能。利用高开关频率和高开关速度对滤波器设计和电路布局尤其具有挑战性。本文全面分析了基于GaN的同步降压变换器的设计考虑,以实现在直流电压为400 V,开关频率为400 kHz时传输功率为4 kW。该分析包括对直流链路电容器高频性能的评估以及对整流单元寄生影响的评估。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical design considerations for a 4 kW buck converter with normally-off GaN devices at a Dc-link voltage of 400 V
GaN power semiconductor devices show promising properties to achieve high power densities in power converters for voltages in the range of 400 V. The utilization of high switching frequencies and high switching speeds are particularly challenging for filter design and the circuit layout. Within this paper, a comprehensive analysis of design considerations for a GaN based synchronous buck converter is presented to achieve a transferred power of 4 kW at a dc-link voltage of 400 V and a switching frequency of 400 kHz. This analysis comprises the evaluation of the high-frequency performance of dc-link capacitors and impacts of parasitics in the commutation cell.
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